, o ne. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-6005 fax : (973 ) 376-896 0 silico n pn p powe r transisto r 2sa116 9 descriptio n ? collector-emitte r breakdow n voltage - v (b r)ceo = -200v(min ) ? hig h powe r dissipatio n ? complemen t t o typ e 2sc277 3 applications ? designe d fo r powe r amplifie r an d genera l purpos e applications . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c p c t j tsl g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r powe r dissipatio n @ t c =25' c junctio n temperatur e storag e temperatur e rang e valu e -20 0 -20 0 - 6 -1 5 15 0 15 0 -55-15 0 uni t vv v a w ? c " c 1 2 3 pi n 1.bas e 2 collecto r 3.bmitte r mt-20 0 packag e di m a b c d f q h j k l n q r s u v m m wi n 21,0 0 35-8 0 5-6 0 1.0 4 3.1 0 1.9 0 3-6 0 0-5 5 20,0 0 2.90 ' 10.5 0 24.0 0 2,9 0 2.0 0 6.9 0 3.9 0 ma x 21.7 0 36-7 0 6-2 0 1.0 7 3.5 0 2.4 0 4.0 0 0.8 5 20.8 0 3.4 0 11.1 0 24.5 0 x ? 2.2 0 7,1 0 9.1 0 n j seini-coiidiictor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s \vitho i notice . informatio n furnishe d h y n j semi-conductor s i s believe d t o h e hot h accurat e an d reliabl e a t th e tim e o f g< : goin g t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conduetor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin a orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa116 9 electrica l characteristic s t c =25" c unles s otherwis e specifie d symbo l v(br)ceov(br)eb o vce(sat ) icb o ieb o h f e co b f t paramete r collector-emitte r breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n outpu t capacitanc e current-gai n bandwidt h produc t condition s lo = -50ma ; i b = 0 ! e =-1ma ; l c = 0 lc=-10a ; i b =-1 a v cb = -200v ; i e = 0 v eb = -6v ; l c = 0 l c = -5a ; v ce = -4 v l e =0;vcb=-10v;f test = 1.0mh z i e =1a ; v ce =-12 v mi n -20 0 - 6 3 0 typ . 40 0 2 0 ma x -2. 5 -10 0 -10 0 20 0 uni t vv v u a u a p f mh z downloaded from: http:///
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